The Communications Edge TM
AH215
1 Watt, High Linearity InGaP HBT Amplifier
Product Information
Product Features
Product Description
Functional Diagram
The AH215 is a high dynamic range driver amplifier in a
low-cost surface mount package. The InGaP/GaAs HBT is
able to achieve superior performance for various
narrowband-tuned application circuits with up to +46 dBm
OIP3 and +31.5 dBm of compressed 1-dB power. The part
is housed in a lead-free/green/RoHS-compliant SOIC-8
package. All devices are 100% RF and DC tested.
• 400 – 2300 MHz
1
8
7
6
5
• +31.5 dBm P1dB
2
3
• +46 dBm Output IP3
• 18 dB Gain @ 900 MHz
• +5V Single Positive Supply
• MTTF > 100 Years
4
The product is targeted for use as driver amplifier for
• Lead-free/green/RoHS-compliant various current and next generation wireless technologies
Function
Vref
Input
Output
Vbias
GND
Pin No.
such as GPRS, GSM, CDMA, W-CDMA, and UMTS,
SOIC-8 SMT Pkg.
1
3
6, 7
8
where high linearity and high power is required. The
internal active bias allows the AH215 to maintain high
Applications
linearity over temperature and operate directly off a +5 V
supply.
Backside Paddle
2, 4, 5
• Final stage amplifiers for Repeaters
• Mobile Infrastructure
N/C or GND
Specifications (1)
Typical Performance (4)
Parameters
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Units Min Typ Max
Parameters
Frequency
Gain
S11
S22
Units
MHz
dB
dB
dB
dBm
dBm
Typical
1960
MHz
MHz
dB
400
2300
900
18
-13
-7
+31
+46
2140
11
-18
-8
+31.5
+45
12
2140
11
-11
-10
+32
+46
10
dB
18
Output P1dB
Output IP3
dB
8
dBm
dBm
dB
+29
+43.8
+31.5
+45
6.3
IS-95A Channel Power
dBm
+25.5
+25.5
@ -45 dBc ACPR
Noise Figure
wCDMA Channel Power
dBm
dB
+23
6.2
IS-95 Channel Power
@ -45 dBc ACPR
dBm
dBm
+25.5
+23
@ -45 dBc ACPR, 1960MHz
Noise Figure
Supply Bias
7.0
5.5
wCDMA Channel Power
+5 V @ 450 mA
@ -45 dBc ACPR, 2140 MHz
Operating Current Range , Icc (3)
Device Voltage, Vcc
mA
V
400
450
5
500
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
1. Test conditions unless otherwise noted: 25 ºC, +5V Vsupply, 2140 MHz, in tuned application circuit.
2. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
pins 6, 7, and 8. It is expected that the current can increase by an additional 90 mA at P1dB. Pin 1
is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull
10.8 mA of current when used with a series bias resistor of R1=51 Ω. (ie. total device current
typically will be 461 mA.)
Absolute Maximum Rating
Parameter
Rating
-40 to +85 °C
-65 to +150 °C
+26 dBm
+8 V
Ordering Information
Operating Case Temperature
Storage Temperature
RF Input Power (continuous)
Device Voltage
Part No.
Description
1 Watt, High Linearity InGaP HBT Amplifier
AH215-S8G
(lead-free/green/RoHS-compliant SOIC-8 Pkg)
AH215-S8PCB900
AH215-S8PCB1960
AH215-S8PCB2140
900 MHz Evaluation Board
1960 MHz Evaluation Board
2140 MHz Evaluation Board
Device Current
Device Power
Junction Temperature
900 mA
5 W
+250 °C
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
Page 1 of 7 September 2005
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com
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