AG604-86
InGaP HBT Gain Block
Product Information
Product Features
· DC – 6000 MHz
Product Description
Functional Diagram
GND
The AG604-86 is a general-purpose buffer amplifier that
offers high dynamic range in a low-cost surface-mount
package. Its robustness and ease of use make it an ideal
candidate for the core of any RFID reader application. It is
compliant with EPC and ISO standards. At 900 MHz, the
AG604-86 typically provides 20.5 dB of gain, +33 dBm
Output IP3, and +19.5 dBm P1dB. The device combines
dependable performance with consistent quality to maintain
MTTF values exceeding 100 years at mounting
temperatures of +85° C and is housed in a SOT-86
industry -standard SMT package.
4
· ISO & EPC compliant
· +19.5 dBm P1dB at 900 MHz
· +33 dBm OIP3 at 900 MHz
· 20.5 dB Gain at 900 MHz
· Single Voltage Supply
· SOT-86 SMT Package
1
3
RF Out
RF In
2
GND
· Internally matched to 50 W
Function
Input
Output/Bias
Ground
Pin No.
The AG604-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT technology process
technology and only requires DC-blocking capacitors, a
bias resistor, and an inductive RF choke for operation.
1
3
2, 4
Applications
· RFID: HF, UHF, microwave
· Readers
The broadband MMIC amplifier can be directly applied to
various current and next generation RFID technologies
such as EPC, ISO, ETSI, and ANSI. Their small size
makes them ideal for PCMCIA applications.
·
·
·
Industrial
Portable
Handheld
Specifications
Typical Performance
Parameter
Frequency Range
Gain (900 MHz)
Gain (1900 MHz)
Input Return Loss
Output Return Loss
Output P1dB
Output IP3 (2)
Output IP2
Noise Figure
Units Min Typ Max
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
Typical
MHz
dB
dB
dB
DC
900
20.5
17.1
21
6000
500
21.8
-19
900
1900
2140
16.4
-18
20.5
-21
17.1
-20
16.1
18.1
-19
-15
-12
-12
dB
15
+19.4 +19.4 +19.2 +19.2
+33.4 +33.1 +33.1 +32.8
dBm
dBm
dBm
dB
+19.4
+33.1
+44
3.5
3.5
3.5
3.7
3.7
Test conditions: T = 25º C, Supply Voltage = +6 V, Rbias = 11.2 W, 50 W System.
Device Voltage
Device Current
Thermal Resistance
Junction Temperature (3)
V
5.16
75
mA
°C / W
°C
206
177
Test conditions unless otherwise noted.
1. T = 25º C, Supply Voltage = +6 V, Rbias = 11.2 W, Frequency = 900 MHz, 50 WSystem.
2. 3OIP measured with two tones at an output power of +2 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. The junction temperature ensures a minimum MTTF rating of 1 million hours of usage.
Absolute Maximum Rating
Ordering Information
Parameter
Rating
-40 to +85 °C
-55 to +125 °C
+7 V
Part No.
Description
Operating Case Temperature
Storage Temperature
DC Voltage
AG604-86
InGaP HBT Gain Block
AG604-86PCB 700 – 2400 MHz Fully Assembled Eval. Board
RF Input Power (continuous)
Junction Temperature
+10 dBm
+250° C
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc · Phone 1-800-WJ1-4401 · FAX: 408-577-6621 · e-mail: sales@wj.com
·
Web site: www.wj.com
February 2004