Datasheet > 6MBP30RH-060

6MBP30RH-060

更新时间： 2022-01-19 03:47:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
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IGBTs

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6MBP30RH-060 数据手册

IGBT IPM

600V

6MBP 30RH-060

6×30A

Intelligent Power Module ( RH-Series )

n Outline Drawing

n Maximum Ratings and Characteristics

• Absolute Maximum Ratings ( T_c=25°C)

Items

Symbols

Ratings

Units

Min.

Max.

450

500

400

600

DC Bus Voltage

DC Bus Voltage (surge)

V_DC

V_DC(Surge)

V_SC

V_CES

I_C

I_CP

-I_C

P_C

DC Bus Voltage (short operating)

Collector-Emitter Voltage

Inverter

Collector

Current

Collector Power Dissipation

Voltage of Power Supply for Driver

Input Signal Voltage

Continuous

1ms

Duty=56.6%

One Transistor

V_CC

V_IN

-0.3

V_Z

Input Signal Current

Alarm Signal Voltage

Alarm Signal Current

I_IN

V_ALM

I_ALM

V_CC

Junction Temperature

Operating Temperature

Storage Temperature

T_J

T_OP

T_stg

150

100

125

-20

-40

°C

Isolation Voltage

Screw Torque

A.C. 1min.

V_iso

Mounting (M4)

2500

2.0

• Electrical Characteristics of Power Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

Conditions

V_CE=600V, Input Terminal Open

I_C=30A

Min.

Typ.

Max.

1.0

2.7

Units

Collector Current At Off Signal Input

Collector-Emitter Saturation Voltage

Forward Voltage of FWD

I_CES

V_CE(Sat)

V_F

-I_C=30A

3.5

• Electrical Characteristics of Control Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

Conditions

f_SW=0~15kHz, T_C=-20~100°C

Typ.

2.0

4.0

1.35

1.60

8.0

Max.

5.0

10.0

1.70

1.95

Units

Current of P-Line Side Driver (One Unit)

Current of N-Line Side Driver (Three Units)

I_CCP

I_CCN

1.00

1.25

V_IN(th)

Input Signal Threshold Voltage

Off

Input Zener Voltage

V_Z

R_IN=20kW

IGBT Chips Over Heating Protec. Temp. Level

Hysteresis

Inverter Collector Current Protection Level

Over Current Detecting Time

Alarm Signal Hold Time

Over Current Detecting Resistance Value

Under Voltage Protection Level

Hysteresis

T_jOH

T_jH

I_OC

t_DOC

t_ALM

R_OC

V_UV

V_H

Surface Of IGBT Chip

150

°C

5.0

2.0

3.7

N-Side, (N1-N2 open)

T_j=25°C

7.0

µs

1.0

11.0

0.2

12.5

0.8

• Dynamic Characteristics ( at T_C=T_j=125°C, V_CC=15V )

Items

Symbols

Conditions

Min.

Typ.

Max.

Units

t_ON

I_C=30A, V_DC=300V

0.5

Switching Time

t_OFF

t_RR

3.5

0.5

µs

I_F=30A, V_DC=300V

• Thermal Characteristics

Items

Symbols

R_th(j-c)

Conditions

Inverter IGBT

Diode

Min.

Typ.

Max.

1.47

2.10

Units

Thermal Resistance

R_th(j-c)

°C/W

R_th(c-f)

With Thermal Compound

0.05

12 3 4

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