Order this document
by 4N25/D
4N25
4N26
4N27
4N28
GlobalOptoisolator
The 4N25, 4N26, 4N27 and 4N28 devices consist of a gallium arsenide
infrared emitting diode optically coupled to a monolithic silicon phototransistor
detector.
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Most Economical Optoisolator Choice for Medium Speed, Switching Applications
Meets or Exceeds All JEDEC Registered Specifications
To order devices that are tested and marked per VDE 0884 requirements, the
suffix ”V” must be included at end of part number. VDE 0884 is a test option.
Applications
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General Purpose Switching Circuits
Interfacing and coupling systems of different potentials and impedances
I/O Interfacing
6
1
Solid State Relays
STANDARD THRU HOLE
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
V
3
Volts
mA
R
SCHEMATIC
Forward Current — Continuous
I
F
60
LED Power Dissipation @ T = 25°C
with Negligible Power in Output Detector
P
D
120
mW
A
1
2
3
6
Derate above 25°C
1.41
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
5
4
V
V
V
30
7
Volts
Volts
Volts
mA
CEO
ECO
CBO
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
70
Collector Current — Continuous
I
C
150
150
4. EMITTER
5. COLLECTOR
6. BASE
Detector Power Dissipation @ T = 25°C
with Negligible Power in Input LED
Derate above 25°C
P
D
mW
A
1.76
mW/°C
TOTAL DEVICE
(1)
Isolation Surge Voltage
(Peak ac Voltage, 60 Hz, 1 sec Duration)
V
ISO
7500
Vac(pk)
Total Device Power Dissipation @ T = 25°C
Derate above 25°C
P
D
250
2.94
mW
mW/°C
A
Ambient Operating Temperature Range
Storage Temperature Range
T
–55 to +100
–55 to +150
260
°C
°C
°C
A
T
stg
Soldering Temperature (10 sec, 1/16″ from case)
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.