3N191
P-CHANNEL MOSFET
The 3N191 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES
The 3N191 is a dual enhancement mode P-Channel
Mosfet and is ideal for space constrained applications
and those requiring tight electrical matching.
DIRECT REPLACEMENT FOR INTERSIL 3N191
LOW GATE LEAKAGE CURRENT
LOW TRANSFER CAPACITANCE
IGSS ≤ ± 10pA
Crss ≤ 1.0pF
ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted)
The hermetically sealed TO-78 package is well suited
for high reliability and harsh environment applications.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
‐55°C to +135°C
(See Packaging Information).
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (one side)
Continuous Power Dissipation (one side)
MAXIMUM CURRENT
300mW
525mW
3N191 Features:
Drain to Source2
50mA
Very high Input Impedance
High Gate Breakdown Voltage
Low Capacitance
MAXIMUM VOLTAGES
Drain to Gate or Drain to Source2
Transient Gate to Source2,3
Gate‐Gate Voltage
‐30V
±125V
±80V
3N191 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
BVDSS
BVSDS
VGS
CHARACTERISTIC
MIN
‐40
‐40
‐3.0
‐2.0
‐2.0
‐‐
‐‐
‐‐
‐‐
‐5.0
‐‐
TYP.
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
MAX
‐‐
‐‐
UNITS
V
CONDITIONS
Drain to Source Breakdown Voltage
Source to Drain Breakdown Voltage
Gate to Source Voltage
ID = ‐10µA
IS = ‐10µA, VBD = 0V
VDS = ‐15V, ID = ‐500µA
VDS = ‐15V, ID = ‐500µA
VDS = VGS , ID = ‐10µA
VGS = 40V
‐6.5
‐5.0
‐5.0
10
‐10
‐200
‐400
‐30
300
4000
VGS(th)
Gate to Source Threshold Voltage
IGSSR
IGSSF
IDSS
Gate Reverse Leakage Current
Forward Gate Leakage Current
Drain to Source Leakage Current
Source to Drain Leakage Current
Drain Current “On”
VGS = ‐40V
VDS = ‐15V
VSD = ‐15V VDB = 0
pA
ISDS
ID(on)
rDS(on)
gfs
mA
Ω
µS
VDS = ‐15V, VGS = ‐10V
VDS = ‐20V, ID = ‐100µA
VDS = ‐15V, ID = ‐5mA , f = 1kHz
Drain to Source “On” Resistance
Forward Transconductance4
1500
Yos
Output Admittance
‐‐
‐‐
300
Click To Buy
Ciss
Crss
Coss
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
‐‐
‐‐
‐‐
‐‐
‐‐
‐‐
4.5
1.0
3.0
pF
VDS = ‐15V, ID = ‐5mA , f = 1MHz
MATCHING CHARACTERISTICS 3N191
SYMBOL
LIMITS
CHARACTERISTIC
Forward Transconductance Ratio
UNITS
ns
mV
CONDITIONS
VDS = ‐15V, ID = ‐500µA , f = kHz
VDS = ‐15V, ID = ‐500µA
MIN
0.85
‐‐
MAX
1.0
100
gfs1/gfs2
VGS1‐2
Gate Source Threshold Voltage
Differential5
∆VGS1‐2/∆T
Gate Source Threshold Voltage
Differential Change with Temperature5
VDS = ‐15V, ID = ‐500µA, TS = ‐55°C to +25°C
VDS = ‐15V, ID = ‐500µA, TS = +25°C to +125°C
‐‐
100
µV/°C
SWITCHING CHARACTERISTICS
SYMBOL
td(on)
tr
CHARACTERISTIC
MIN
‐‐
‐‐
TYP
‐‐
‐‐
MAX
15
30
UNITS
ns
CONDITIONS
Turn On Delay Time
Turn On Rise Time
Turn Off Time
VDD = ‐15V, ID(on) = ‐5mA, RG = RL = 1.4KΩ
toff
‐‐
‐‐
50
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N191 serviceability may be impaired.
Note 2 – Per Transistor
Note 3 – Approximately doubles for every 10°C in TA
Note 4 – Measured at end points, TA and TB
Note 5 – Pulse: t= 300µS, Duty Cycle ≤ 3%
Device Schematic
TO-78 (Bottom View)
Available Packages:
3N191 in TO-72
3N191 in bare die.
Tel: +44 1603 788967
Email: chipcomponents@micross.com
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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