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33LV408 PDF预览

33LV408

更新时间: 2022-11-25 18:14:31
品牌 Logo 应用领域
麦斯威 - MAXWELL 静态存储器
页数 文件大小 规格书
12页 217K
描述
4 Megabit (512K x 8-Bit) CMOS SRAM

33LV408 数据手册

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33LV408  
4 Megabit (512K x 8-Bit)  
CMOS SRAM  
33LV408  
Logic Diagram  
FEATURES:  
DESCRIPTION:  
• RAD-PAK® Technology radiation-hardened against natural  
space radiation  
• 524,288 x 8 bit organization  
Maxwell Technologies’ 33LV408 high-density 4 Megabit  
SRAM microcircuit features a greater than 100 krad (Si) total  
dose tolerance, depending upon space mission. Using Max-  
well’s radiation-hardened RAD-PAK® packaging technology, the  
33LV408 realizes a high density, high performance, and low  
power consumption. Its fully static design eliminates the need  
for external clocks, while the CMOS circuitry reduces power  
consumption and provides higher reliability. The 33LV408 is  
equipped with eight common input/output lines, chip select  
and output enable, allowing for greater system flexibility and  
eliminating bus contention. The 33LV408 features the same  
advanced 512K x 8-bit SRAM, high-speed, and low-power  
demand as the commercial counterpart.  
· Total dose hardness:  
- > 100 krad (Si), depending upon space mission  
• Excellent Single Event Effect  
· - SEL : > 101 MeV/mg/cm2  
TH  
· - SEUTH: = 3 MeV/mg/cm2  
- SEU saturated cross section: 6E-9 cm2/bit  
• Package:  
- 32-Pin RAD-PAK® flat pack  
• Fast access time:  
- 20, 25, 30 ns maximum times available  
• Single 3.3V + 10% power supply  
• Fully static operation  
Maxwell Technologies' patented RAD-PAK® packaging technol-  
ogy incorporates radiation shielding in the microcircuit pack-  
age. It eliminates the need for box shielding while providing  
the required radiation shielding for a lifetime in orbit or space  
mission. In a GEO orbit, RAD-PAK® provides greater than 100  
krad (Si) radiation dose tolerance. This product is available  
with screening up to Class S.  
- No clock or refresh required  
Three state outputs  
TTL compatible inputs and outputs  
Low power:  
- Standby: 60 mA (TTL); 10 mA (CMOS)  
- Operation: 150 mA (20 ns); 140 mA (25 ns);  
130 mA (30 ns)  
04.02.04 REV 2  
1
All data sheets are subject to change without notice  
(858) 503-3300 - Fax: (858) 503-3301 - www.maxwell.com  
©2004 Maxwell Technologies  
All rights reserved.  

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