33LV408
4 Megabit (512K x 8-Bit)
CMOS SRAM
33LV408
Logic Diagram
FEATURES:
DESCRIPTION:
• RAD-PAK® Technology radiation-hardened against natural
space radiation
• 524,288 x 8 bit organization
Maxwell Technologies’ 33LV408 high-density 4 Megabit
SRAM microcircuit features a greater than 100 krad (Si) total
dose tolerance, depending upon space mission. Using Max-
well’s radiation-hardened RAD-PAK® packaging technology, the
33LV408 realizes a high density, high performance, and low
power consumption. Its fully static design eliminates the need
for external clocks, while the CMOS circuitry reduces power
consumption and provides higher reliability. The 33LV408 is
equipped with eight common input/output lines, chip select
and output enable, allowing for greater system flexibility and
eliminating bus contention. The 33LV408 features the same
advanced 512K x 8-bit SRAM, high-speed, and low-power
demand as the commercial counterpart.
· Total dose hardness:
- > 100 krad (Si), depending upon space mission
• Excellent Single Event Effect
· - SEL : > 101 MeV/mg/cm2
TH
· - SEUTH: = 3 MeV/mg/cm2
- SEU saturated cross section: 6E-9 cm2/bit
• Package:
- 32-Pin RAD-PAK® flat pack
• Fast access time:
- 20, 25, 30 ns maximum times available
• Single 3.3V + 10% power supply
• Fully static operation
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
- No clock or refresh required
• Three state outputs
• TTL compatible inputs and outputs
• Low power:
- Standby: 60 mA (TTL); 10 mA (CMOS)
- Operation: 150 mA (20 ns); 140 mA (25 ns);
130 mA (30 ns)
04.02.04 REV 2
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All data sheets are subject to change without notice
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