Datasheet > 2SK0663(2SK663)

2SK0663(2SK663)

更新时间： 2022-01-18 18:42:00

品牌	Logo	应用领域
其他 - ETC		信号器
页数	文件大小	规格书
3页	76K
描述
Small-signal device - Small-signal FETs - Junction FETs

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2SK0663(2SK663) 数据手册

Silicon Junction FETs (Small Signal)

2SK0663 (2SK663)

Silicon N-Channel Junction FET

For low-frequency amplification

For switching

unit: mm

+0.10

–0.05

+0.1

–0.0

0.15

0.3

I Features

G Low noise-figure (NF)

G High gate to drain voltage V_GDO

G S-mini type package, allowing downsizing of the sets and auto-

matic insertion through the tape/magazine packing.

(0.65) (0.65)

1.3±0.1

2.0±0.2

10°

I Absolute Maximum Ratings (Ta = 25°C)

Parameter

Drain to Source voltage

Gate to Drain voltage

Gate to Source voltage

Drain current

Symbol

V_DSX

V_GDO

V_GSO

I_D

Ratings

Unit

−55

1: Source

2: Drain

3: Gate

−55

EIAJ: SC-70

SMini3-G1 Package

°C

Gate current

I_G

Marking Symbol (Example): 2B

Allowable power dissipation

Junction temperature

Storage temperature

P_D

150

T_j

125

T_stg

−55 to +125

°C

I Electrical Characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

min

typ

max

Unit

Drain to Source cut-off current

Gate to Source leakage current

Gate to Drain voltage

I_DSS

V_DS= 10V, V_GS= 0

V_GS= −30V, V_DS= 0

_G= 100µA, V_DS= 0

I_GSS

V_GDS

V_GSC

g_m

−10

Gate to Source cut-off voltage

Mutual conductance

V_DS= 10V, I_D= 10µA

−5

V_DS= 10V, I_D= 5mA, f = 1kHz

2.5

7.5

6.5

1.9

Input capacitance (Common Source) C_iss

V_DS= 10V, V_GS= 0, f = 1MHz

Reverse transfer capacitance (Common Source) C_rss

V_DS= 10V, V_GS= 0, R_g= 100kΩ

Noise figure

2.5

f = 100Hz

^*I_DSSrank classification

Runk

I_DSS(mA)

1 to 3

2BP

2 to 6.5

2BQ

5 to 12

2BR

Marking Symbol

Note) The part number in the parenthesis shows conventional part number.

253

12 3

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