生命周期: | Transferred | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.38 |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 8 A |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 20 W |
最大脉冲漏极电流 (IDM): | 32 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SJ655 | SANYO | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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|
2SJ656 | SANYO | General-Purpose Switching Device |
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|
2SJ657 | SANYO | General-Purpose Switching Device |
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|
2SJ658 | SANYO | High-Speed Switching Applications |
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|
2SJ659 | SANYO | P-Channel Silicon MOSFET General-Purpose Switching Device |
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|
2SJ659(SMP-FD) | ONSEMI | TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,14A I(D),TO-263ABVAR |
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