Datasheet > 2SJ401(TE24L)

2SJ401(TE24L)

更新时间： 2024-02-06 21:52:12

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
6页	437K
描述
Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-220FL/SM T/R

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技术参数
数据手册

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2SJ401(TE24L) 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.53	Base Number Matches：	1

2SJ401(TE24L) 数据手册

2SJ401

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L −π−MOSV)

2SJ401

DC−DC Converter, Relay Drive and Motor Drive

Applications

Unit: mm

ꢀ

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

: R = 33 mΩ (typ.)

DS (ON)

: |Y | = 20 S (typ.)

Low leakage current : I

= −100 µA (max) (V

= −60 V)

DSS

Enhancement mode : V = −0.8~−2.0 V (V

= −10 V, I = −1 mA)

Maximum Ratings

(Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain−source voltage

−60

±20

−20

−80

100

DSS

Drain−gate voltage (R

= 20 kΩ)

DGR

Gate−source voltage

GSS

DC (Note 1)

Pulse(Note 1)

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

800

JEDEC

JEITA

―

(Note 2)

Avalanche current

−20

Repetitive avalenche energy (Note 3)

Channel temperature

°C

TOSHIBA

2-10S1B

150

Weight: 1.5 g (typ.)

Storage temperature range

−55~150

stg

Thermal Characteristics

Characteristics

Symbol

Max

1.25

83.3

Unit

Thermal resistance, channel to case

°C / W

th (ch−c)

th (ch−a)

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

= −50 V, T = 25°C (initial), L = 1.44 mH,

= 25 Ω, I

= −20 A

Note 3: Repetitive rating: pulse width limited by maximum channel

temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

JEDEC

JEITA

―

TOSHIBA

2-10S2B

Weight: 1.5 g (typ.)

2004-07-06

12 3 4 5 6

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