Datasheet > 2SJ103_07

2SJ103_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		转换器开关音频放大器
页数	文件大小	规格书
4页	524K
描述
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

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2SJ103_07 数据手册

2SJ103

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type

2SJ103

For Audio Amplifier, Analog Switch, Constant Current

and Impedance Converter Applications

Unit: mm

•

High breakdown voltage: V

= 50 V

GDS

High input impedance: I

= 1.0 nA (max) (V

= 30 V)

GSS

Low R

: R

= 270 Ω (typ.) (I

= −5 mA)

DS (ON) DS (ON)

DSS

Complimentary to 2SK246

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Gate-drain voltage

Symbol

Rating

Unit

−10

GDS

Gate current

°C

Drain power dissipation

Junction temperature

Storage temperature range

300

125

stg

−55~125

°C

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

TO-92

SC-43

TOSHIBA

2-5F1C

Weight: 0.21 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate cut-off current

Symbol

Test Condition

Min

Typ.

Max

Unit

= 30 V, V = 0

⎯

1.0

GSS

Gate-drain breakdown voltage

= 0, I = 100 μA

⎯

(BR) GDS

DSS

(Note)

Drain current

= −10 V, V

= 0

−1.2

⎯

−14

Gate-source cut-off voltage

Forward transfer admittance

Drain-source ON resistance

Input capacitance

= −10 V, I = −0.1 μA

0.3

1.0

⎯

4.0

270

6.0

⎯

GS (OFF)

⎪Y ⎪

= −10 V, V

= 0, f = 1 kHz

= −10 mV, V

= 0, I

= −5 mA

= 0, f = 1 MHz

DS (ON)

GS DSS

= −10 V, V

⎯

iss

rss

Reverse transfer capacitance

= −10 V, I = 0, f = 1 MHz

⎯

3.6

Note: I

classification Y: −1.2~−3.0 mA, GR: −2.6~−6.5 mA, BL: −6~−14 mA

DSS

2007-11-01

12 3 4

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