DATA SHEET
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
FEATURES
PACKAGE DRAWING (UNIT: mm)
•
High voltage
VCEO: −180 V / −200 V
(2SA1376/2SA1376A)
Excellent hFE linearity
•
•
High total power dissipation in small dimension:
PT: 0.75 W
•
Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Ratings
−200
−180/−200
−5
−100
−200
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
W
0.75
°C
°C
Tj
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
2SA1376/2SA1376A
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = −200 V, IE = 0
VEB = −5 V, IC = 0
VCE = −10 V, IC = −10 mA
VCE = −10 V, IC = −100 mA
VCE = −10 V, IC = −10 mA
IC = −50 mA, IB = −5 mA
IC = −50 mA, IB = −5 mA
VCB = −30 V, IE = 0, f = 1.0 MHz
VCE = −10 V, IE = 10 mA
MIN.
TYP.
MAX.
−100
−100
Unit
nA
nA
−
IEBO
hFE1 **
hFE2 **
VBE **
VCE(sat) **
VBE(sat) **
Cob
135
81
300/200 600/400
−
DC current gain
−600
−650
−0.2
−0.8
3.5
−700
−0.3
−1.2
4.0
DC base voltage
mV
V
Collector saturation voltage
Base saturation voltage
Output capacitance
Gain bandwidth product
Turn-on time
V
pF
MHz
µs
µs
fT
80
120
0.16
1.5
IC = −10 mA, IB1 = −IB2 = −1 mA,
VCC = –10 V
ton
Turn-off time
toff
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998
©