2SA1235A
-0.2A , -60V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
Low Collector Current
Low Collector Power Dissipation
A
L
3
3
Top View
C B
CLASSIFICATION OF hFE (1)
1
1
2
2
2SA1235A-ME
2SA1235A-MF
250~500
M‧F
Product-Rank
K
F
E
150~300
Range
D
Marking
M‧E
H
J
G
Millimeter
Millimeter
Min. Max.
0.10 REF.
0.55 REF.
REF.
REF.
Min.
Max.
3.00
2.55
1.40
1.15
PACKAGE INFORMATION
A
B
C
D
2.80
2.25
1.20
0.90
G
H
J
0.08
0.15
Package
MPQ
LeaderSize
K
0.5 REF.
E
F
1.80
0.30
2.00
0.50
L
0.95 TYP.
SOT-23
3K
7’ inch
Collector
Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
V
V
mA
mW
-60
-50
-6
-200
200
PC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
RθJA
625
°C / W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage V(BR)CBO
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Symbol
Min.
-60
-50
-6
Typ.
Max.
-
-
-
Unit
V
V
V
nA
Test Conditions
IC= -100A, IE=0
IC= -0.1mA, IB=0
IE= -100A, IC=0
VCB= -60V, IE=0
-
-
-
-
V(BR)CEO
V(BR)EBO
ICBO
-
-100
Emitter Cut-off Current
IEBO
-
-
-
-
-100
500
-
nA
VEB= -6V, IC=0
hFE (1)
hFE (2)
VCE(sat)
150
90
VCE= -6V, IC= -1mA
VCE= -6V, IC= -0.1mA
DC Current Gain
Collector to Emitter
Saturation Voltage
-
-
-
-
-0.3
-1
V
V
IC= -100mA, IB= -10mA
IC= -100mA, IB= -10mA
Base to Emitter Saturation Voltage
VBE(sat)
Transition Frequency
fT
-
-
200
4
-
-
MHz
pF
VCE= -6V, IC= -10mA
Collector Output Capacitance
Cob
VCB= -6V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jan-2011 Rev. A
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