Datasheet > 2SA1036K3000

2SA1036K3000

更新时间： 2022-09-16 16:36:56

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
4页	78K
描述
Medium Power Transistor

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2SA1036K3000 数据手册

2SA1036K

Transistors

Medium Power Transistor

2SA1036K

zExternal dimensions (Unit : mm)

zFeatures

1) Large I_C.

I_CMAX.= -500mA

2) Low V_CE(sat).Ideal for low-voltage

operation.

2SA1036K

2.9 0.2

1.9 0.2

+0.2

1.1

0.1

0.8 0.1

0.95 0.95

3) Complements the 2SC2411K.

(2)

(1)

0~0.1

(3)

zStructure

+0.1

0.15

Epitaxial planer type

PNP silicon transistor

+0.1

0.06

0.4

0.05

All terminals have

same dimensions

(1) Emitter

(2) Base

(3) Collector

ROHM : SMT3

EIAJ : SC-59

Abbreviated symbol : H ∗

∗ Denotes hFE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Limits

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

−40

−32

−5

∗

−0.5

P_C

Collector power dissipation

Junction temperature

Storage temperature

0.2

°C

150

Tstg

−55 to +150

∗

C MAX. must not be exceeded.

Rev.A

1/3

12 3 4

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