JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
2SA1020 TRANSISTOR (PNP)
1. EMITTER
FEATURES
Power Amplifier Applications
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-50
V
-50
V
-5
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
-2
A
PC
900
150
-55-150
mW
TJ
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
-50
-50
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC =-100µA,IE=0
V(BR)CEO IC =-10mA,IB=0
V(BR)EBO IE=-100µA,IC=0
V
V
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=-50V,IE=0
-1
-1
µA
µA
Emitter cut-off current
VEB=-5V,IC=0
VCE=-2V,IC=-0.5A
VCE=-2V,IC=-1.5A
IC=-1A,IB=-50mA
IC=-1A,IB=-50mA
VCE=-2V,IC=-500mA
VCB=-10V,IE=0,f=1MHz
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
-0.5
-1.2
V
V
100
40
0.1
1
MHz
pF
μs
Cob
ton
V
CC=-30V,IB1=-IB2=-0.05A, IC=-1A
Storage time
ts
μs
Fall time
tf
0.1
μs
CLASSIFICATION OF hFE(1)
Rank
O
Y
70-140
120-240
Range
A,Jun,2011