Datasheet > 2SA0794A(2SA794A)

2SA0794A(2SA794A)

更新时间： 2022-01-19 21:09:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	88K
描述
Power Device - Power Transistors - Others

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2SA0794A(2SA794A) 数据手册

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Power Transistors

2SA0794, 2SA0794A (2SA794, 2SA794A)

Silicon PNP epitaxial planar type

Unit: mm

+0.5

–0.1

For low-frequency output driver

8.0

3.2±0.2

Complementary to 2SC1567 and 2SC1567A

φ 3.16±0.1

I Features

•

High collector to emitter voltage V_CEO

Optimum for the driver stage of low-frequency and 40 W to 100 W

output amplifier

•

TO-126B package which requires no insulation plate for installa-

tion to the heat sink

0.75±0.1

4.6±0.2

0.5±0.1

2.3±0.2

I Absolute Maximum Ratings T_C= 25°C

0.5±0.1

1.76±0.1

Parameter

Symbol

Rating

−100

−120

−100

−120

−5

Unit

1: Emitter

2: Collector

3: Base

2SA0794

2SA0794A

2SA0794

2SA0794A

V_CBO

Collector to base

voltage

TO-126B-A1 Package

V_CEO

Collector to

emitter voltage

Emitter to base voltage

Peak collector current

Collector current

V_EBO

I_CP

I_C

−1

− 0.5

1.2

Collector power dissipation

Junction temperature

Storage temperature

P_C

°C

T_j

150

T_stg

−55 to +150

I Electrical Characteristics T_C= 25°C

Parameter

Symbol

Conditions

Min

−100

−120

−5

Typ

Max

Unit

2SA0794

V_CEO

I_C= −100 µA, I_B= 0

Collector to emitter

voltage

2SA0794A

Emitter to base voltage

V_EBO

I_E= −1 µA, I_C= 0

Forward current transfer ratio

h_FE1

V_CE= −10 V, I_C= −150 mA

V_CE= −5 V, I_C= −500 mA

I_C= −500 mA, I_B= −50 mA

160

100

220

h_FE2

V_CE(sat)

V_BE(sat)

f_T

Collector to emitter saturation voltage

Base to emitter saturation voltage

Transition frequency

− 0.2 − 0.4

− 0.85 −1.2

120

V_CB= −10 V, I_E= 50 mA, f = 200 MHz

V_CB= −10 V, I_E= 0, f = 1 MHz

MHz

Collector output capacitance

C_ob

Note) : Rank classification

Rank

h_FE1

90 to 155

130 to 220

Note.) The Part numbers in the Parenthesis show conventional part number.

12 3 4

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