生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.74 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 2.5 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 5 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 50 W | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 0.2 MHz |
VCEsat-Max: | 2 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6477-6258 | RENESAS | Power Bipolar Transistor, 2.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla |
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2N6477-6265 | RENESAS | Power Bipolar Transistor, 2.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla |
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2N6477-DR6259 | RENESAS | Power Bipolar Transistor, 2.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla |
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2N6477-DR6260 | RENESAS | 2.5A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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2N6477-DR6269 | RENESAS | 2.5A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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2N6477-DR6274 | RENESAS | 2.5A, 120V, NPN, Si, POWER TRANSISTOR, TO-220AB |
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