生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.68 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 4 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 2 | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6475-6201 | RENESAS | 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AA |
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2N6475-6203 | RENESAS | 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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2N6475-6204 | RENESAS | Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AA, Plast |
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2N6475-6206 | RENESAS | Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AA, Plast |
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2N6475-6226 | RENESAS | 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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2N6475-6255 | RENESAS | 4A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB |
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