SEMICONDUCTOR TECHNICAL DATA
. . . designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —
= 2500 (Typ) @ I = 4.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mAdc —
h
FE
C
•
V
V
V
= 60 Vdc (Min) — 2N6040, 2N6043
= 80 Vdc (Min) — 2N6041, 2N6044
= 100 Vdc (Min) — 2N6042, 2N6045
CEO(sus)
CEO(sus)
CEO(sus)
•
•
Low Collector–Emitter Saturation Voltage —
V
V
= 2.0 Vdc (Max) @ I = 4.0 Adc — 2N6040,41, 2N6043,44
CE(sat)
CE(sat)
C
= 2.0 Vdc (Max) @ I = 3.0 Adc — 2N6042, 2N6045
C
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*Motorola Preferred Device
MAXIMUM RATINGS (1)
2N6040 2N6041 2N6042
2N6043 2N6044 2N6045
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80–100 VOLTS
75 WATTS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
60
60
80
80
100
100
V
CB
EB
V
5.0
Collector Current — Continuous
Peak
I
C
8.0
16
Base Current
I
B
120
mAdc
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P
D
75
0.60
Watts
W/ C
Total Power Dissipation @ T = 25 C
A
Derate above 25 C
P
D
2.2
0.0175
Watts
W/ C
Operating and Storage Junction,
Temperature Range
T , T
J stg
–65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(1) Indicates JEDEC Registered Data.
θ
θ
1.67
57
JC
JA
CASE 221A–06
TO–220AB
T
A
T
C
4.0 80
3.0 60
2.0 40
1.0 20
T
C
T
A
0
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
3–89
Motorola Bipolar Power Transistor Device Data