是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.91 | 最大集电极电流 (IC): | 30 A |
配置: | Single | 最小直流电流增益 (hFE): | 20 |
JESD-609代码: | e0 | 最高工作温度: | 200 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 100 W |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 标称过渡频率 (fT): | 30 MHz |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N593 | NJSEMI | BIDIRECTIONAL TRANSISTOR |
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2N5930 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
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2N5930 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 |
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2N5931 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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2N5931E3 | MICROSEMI | Power Bipolar Transistor, 30A I(C), 160V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL |
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2N5932 | SEME-LAB | Bipolar NPN Device in a Hermetically sealed TO3 |
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