2N5202
www.centralsemi.com
SILICON
NPN POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5202 is a silicon
NPN power transistor mounted in a hermetically sealed
metal case, designed for general purpose amplifier and
switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
UNITS
V
C
V
V
V
V
100
CBO
CER
CEO
EBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
75
V
V
50
6.0
V
Continuous Collector Current
Peak Collector Current
I
4.0
A
C
I
5.0
A
CM
Continuous Base Current
Power Dissipation
I
2.0
A
B
P
35
W
°C
°C/W
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +200
5.0
J
stg
JC
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=100V, V =1.5V
10
mA
CEV
CEV
EBO
CE
CE
EB
EB
=100V, V =1.5V, T =150°C
EB
=6.0V
10
10
mA
mA
V
C
BV
I =200mA
50
75
CEO
CER
C
BV
I =200mA, R =50Ω
V
C
BE
V
V
I =4.0A, I =400mA
1.2
2.0
V
CE(SAT)
BE(SAT)
FE
C
B
I =4.0A, I =400mA
V
C
B
h
V
=1.2V, I =4.0A
10
100
CE
CE
CB
CE
BB
CC
CC
CC
CC
C
|h |
C
V
V
V
V
V
V
V
V
=10V, I =500mA
6.0
fe
C
=10V, f=1.0MHz
=40V, tp=1.0s
175
pF
mA
mJ
ns
ob
I
400
0.4
s/b
E
=4.0V, R =50ꢀ, L=50μH
BE
s/b
t
t
t
t
=30V, I =4.0A, I =I =0.8A
40
400
1200
400
d
C
B1 B2
=30V, I =4.0A, I =I =0.8A
ns
r
C
B1 B2
=30V, I =4.0A, I =I =0.8A
ns
s
f
C
B1 B2
=30V, I =4.0A, I =I =0.8A
ns
C
B1 B2
R0 (15-January 2019)