ON Semiconductor)
2N4918
thru
Medium-Power Plastic PNP
Silicon Transistors
*
2N4920
. . . designed for driver circuits, switching, and amplifier
applications. These high–performance plastic devices feature:
*ON Semiconductor Preferred Device
3 AMPERE
GENERAL–PURPOSE
POWER TRANSISTORS
40–80 VOLTS
• Low Saturation Voltage —
V
= 0.6 Vdc (Max) @ I = 1.0 Amp
CE(sat)
• Excellent Power Dissipation Due to Thermopad Construction —
C
30 WATTS
P
= 30 W @ T = 25_C
D
C
• Excellent Safe Operating Area
• Gain Specified to I = 1.0 Amp
C
• Complement to NPN 2N4921, 2N4922, 2N4923
*MAXIMUM RATINGS
Ratings
Symbol 2N4918 2N4919 2N4920
Unit
Vdc
Vdc
Vdc
Adc
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
V
40
40
60
60
80
80
CEO
3
2
1
V
CB
EB
CASE 77–09
TO–225AA TYPE
V
5.0
Collector Current — Continuous (1)
I *
C
1.0
3.0
Base Current
I
B
1.0
Adc
Total Power Dissipation @ T = 25°C
Derate above 25_C
P
D
30
0.24
Watts
W/_C
C
Operating & Storage Junction
Temperature Range
T , T
J stg
–65 to +150
_C
THERMAL CHARACTERISTICS (2)
Characteristic
Symbol
Max
4.16
Unit
Thermal Resistance, Junction to Case
θ
_C/W
JC
*Indicates JEDEC Registered Data for 2N4918 Series.
(1) The 1.0 Amp maximum I value is based upon JEDEC current gain requirements.
C
The 3.0 Amp maximum value is based upon actual current–handling capability of the
device (See Figure 5).
(2) Recommend use of thermal compound for lowest thermal resistance.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
April, 2002 – Rev. 10
2N4918/D