2N4123, 2N4124
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• Pb−Free Packages are Available*
COLLECTOR
3
MAXIMUM RATINGS
Rating
2
Symbol
Value
Unit
BASE
Collector−Emitter Voltage
2N4123
V
CEO
Vdc
30
25
2N4124
1
EMITTER
Collector−Base Voltage
2N4123
V
CBO
Vdc
40
30
2N4124
Emitter−Base Voltage
V
EBO
5.0
Vdc
Collector Current − Continuous
I
200
mAdc
TO−92
CASE 29
STYLE 1
C
Total Device Dissipation @ T = 25°C
P
625
5.0
mW
mW/°C
A
D
Derate above 25°C
Total Device Dissipation @ T = 25°C
P
D
1.5
12
W
mW/°C
C
1
1
2
3
2
Derate above 25°C
3
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
STRAIGHT LEAD
BULK PACK
BENT LEAD
TAPE & REEL
AMMO PACK
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
R
q
JA
200
°C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3
°C/W
2N
412x
AYWW G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
RecommendedOperating Conditions may affect device reliability.
x = 3 or 4
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
2N4123RLRM
2N4124G
TO−92
2000 / Tape & Ammo
5000 Units / Bulk
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
1
Publication Order Number:
November, 2008 − Rev. 4
2N4123/D