Datasheet > 2N3866_1

2N3866_1

更新时间： 2022-05-13 04:00:17

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
4页	142K
描述
NPN SILICON HIGH-FREQUENCY TRANSISTOR

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2N3866_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

Gort Road Business Park, Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298

NPN SILICON

HIGH-FREQUENCY TRANSISTOR

Qualified per MIL-PRF-19500/398

DEVICES

LEVELS

JAN

2N3866

2N3866UB

2N3866A

2N3866AUB

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

V_CEO

V_CBO

V_EBO

I_C

Value

Unit

Vdc

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Vdc

305

400

Vdc

mAdc

Total Power Dissipation

@ T_A= +25°C

2N3866, A

2N3866UB / AUB

1.0

0.5

P_T

Operating & Storage Junction Temperature Range

T_j, T_stg

R_θJC

-65 to +200

60.0

°C

TO-39 (TO-205AD)

2N3866, 2N3866A

Thermal Resistance, Junction-to-Case

°C/W

NOTE:

1. Derate linearly 5.71mW/°C (2N3866, 2N3866A) and 3.08mW/°C (2N3866UB /

2N3866AUB) above T_A> +25°C

2. T_A= room ambient as defined in the general requirements of MIL-PRF-19500

3. P_T= 2.9W at T_C= +25°C, derate at 16.6mW/°C above T_C> +25°C

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

UB Package

2N3866UB, 2N3866AUB

Collector-Emitter Breakdown Voltage

I_C= 5.0mAdc

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CEO

Vdc

Collector-Base Breakdown Voltage

I_C= 100µAdc

Emitter-Base Breakdown Voltage

I_E= 100µAdc

3.5

Vdc

Collector-Emitter Cutoff Current

μAdc

_CE= 28Vdc

Collector-Emitter Cutoff Current

V_CE= 55Vdc

I_CES1

100

T4-LDS-0175 Rev. 1 (101096)

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