是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | not_compliant | 风险等级: | 5.92 |
最大集电极电流 (IC): | 0.5 A | 配置: | Single |
最小直流电流增益 (hFE): | 20 | 最高工作温度: | 100 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.15 W |
子类别: | Other Transistors | 表面贴装: | NO |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N316 | DIGITRON | TRANSISTOR,BJT,PNP,10V V(BR)CEO,200MA I(C),TO-5 |
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2N3163 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 |
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2N3163E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 |
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2N3164 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 |
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2N3164E3 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 |
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2N3165 | MICROSEMI | Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 |
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