NPN SILICON PLANAR TRANSISTOR
2N2484
TO-18
Boca Semiconductor Corp
BSC
This transistors is primarily intended for use in high performance, low level,
low noise amplifier applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector Current Continuous
Power Dissipation @Ta=25 degC
Derate Above 25 deg C
Power Dissipation @Tc=25 degC
Derate Above 25 deg C
Operating And Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
60
60
6.0
50
360
2.06
1.20
6.85
V
V
V
mA
mW
PD
mw/deg C
W
mw/deg C
deg C
PD
Tj, Tstg
-65 to +200
THERMAL RESISTANCE
Junction to Case
Junction to Ambient in Free Air
Lead Temperature
Rth(j-c)
Rth(j-a) *
TL
146
485
300
deg C/W
deg C/W
deg C
1/16" from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
Min
60
60
6.0
-
MAX UNIT
Collector -Emitter Voltage
Collector -Base Voltage
Emitter -Base Voltage
Collector-Cut off Current
VCEO**
VCBO
VEBO
ICBO
IC=10mA,IB=0
IC=10uA.IE=0
IE=10uA, IC=-0
VCB=45V, IE=0
-
-
V
V
-
V
10
nA
Ta=150 deg C
VCB=45V, IE=0
VEB=5V, IC=0
-
-
-
10
10
0.35
0.7
uA
nA
V
Emitter-Cut off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
IEBO
VCE(Sat) IC=1mA,IB=0.1mA
VBE(on) IC=0.1mA, VCE=5V
0.5
V
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