2N2060M
www.centralsemi.com
SILICON
DUAL NPN TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2060M is a silicon
dual NPN transistor utilizing two individual chips mounted
in a hermetically sealed metal case designed for
differential amplifier applications.
MARKING: FULL PART NUMBER
TO-78 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
A
SYMBOL
UNITS
Collector-Base Voltage
V
100
80
V
CBO
CER
CEO
EBO
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
V
V
60
7.0
V
Continuous Collector Current
Power Dissipation (One Die)
Power Dissipation (Both Dice)
I
500
mA
mW
mW
W
C
P
P
P
P
500
D
D
D
D
600
Power Dissipation (One Die, T =25°C)
1.5
C
Power Dissipation (Both Dice, T =25°C)
3.0
W
C
Operating and Storage Junction Temperature
T , T
-65 to +200
°C
J
stg
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
=80V
2.0
nA
CBO
EBO
CB
EB
I
V
=5.0V
2.0
nA
V
BV
BV
BV
BV
I =100μA
100
80
CBO
CER
CEO
EBO
CE(SAT)
BE(SAT)
FE
C
I =10mA, R =10Ω
BE
V
C
I =30mA
60
V
C
I =100μA
7.0
V
E
V
V
I =50mA, I =5.0mA
1.2
0.9
V
C
B
I =50mA, I =5.0mA
V
C
B
h
h
h
h
V
=5.0V, I =10μA
25
30
40
50
60
150
150
150
200
CE
CE
CE
CE
CE
CB
BE
CE
C
V
V
V
V
V
V
V
=5.0V, I =100μA
FE
C
=5.0V, I =1.0mA
FE
C
=5.0V, I =10mA
FE
C
f
=10V, I =50mA, f=20MHz
MHz
pF
T
C
C
C
=10V, I =0, f=1.0MHz
15
85
ob
E
=0.5V, I =0, f=1.0MHz
pF
ib
C
NF
=10V, I =300μA, R =510Ω,
C S
f=1.0kHz, BW=200Hz
8.0
dB
R1 (2-December 2013)