生命周期: | Obsolete | 零件包装代码: | TO-61 |
包装说明: | POST/STUD MOUNT, O-MUPM-D3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.31 | 最大集电极电流 (IC): | 5 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 15 | JEDEC-95代码: | TO-61 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 85 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N1209 | NJSEMI | Trans GP BJT NPN 45V 5A 3-Pin TO-61 |
获取价格 |
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2N1210 | NJSEMI | Trans GP BJT NPN 60V 5A 3-Pin TO-61 |
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|
2N1211 | NJSEMI | Trans GP BJT NPN 60V 5A 3-Pin TO-61 |
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2N1212 | NJSEMI | Trans GP BJT NPN 60V 5A 3-Pin TO-61 |
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|
2N1212E3 | MICROSEMI | Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 |
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2N1218 | ETC | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 3A I(C) | TO-3 |
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