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2DB1713-13 PDF预览

2DB1713-13

更新时间： 2024-01-13 07:46:14
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 88K
描述
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

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2DB1713-13 数据手册

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2DB1713  
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Epitaxial Planar Die Construction  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Complementary NPN Type Available (2DD2678)  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
•
•
•
•
•
TOR  
LLEC  
CO  
2,4  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
B
3
EMITTER  
VIEW  
OP  
Top View  
Device Schematic  
Pin Out Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
-15  
-12  
-6  
Unit  
V
V
V
A
Peak Pulse Current  
-6  
Continuous Collector Current  
-3  
A
IC  
Thermal Characteristics  
Characteristic  
Power Dissipation (Note 3) @ TA = 25°C  
Symbol  
PD  
Value  
0.9  
Unit  
W
139  
°C/W  
W
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Power Dissipation (Note 4) @ TA = 25°C  
Rθ  
JA  
2
PD  
62.5  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 5)  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
-15  
-12  
-6  
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = -10μA, IE = 0  
C = -1mA, IB = 0  
E = -10μA, IC = 0  
V
-0.1  
⎯
⎯
μA  
μA  
VCB = -15V, IE = 0  
VEB = -6V, IC = 0  
Emitter Cut-Off Current  
-0.1  
IEBO  
ON CHARACTERISTICS (Note 5)  
Collector-Emitter Saturation Voltage  
DC Current Gain  
-120  
-250  
680  
mV  
VCE(SAT)  
hFE  
⎯
270  
IC = -1.5A, IB = -30mA  
VCE = -2V, IC = -500mA  
⎯
⎯
SMALL SIGNAL CHARACTERISTICS  
V
CB = -10V, IE = 0,  
f = 1MHz  
CE = -2V, IC = -100mA,  
f = 100MHz  
Output Capacitance  
40  
pF  
Cobo  
fT  
⎯
⎯
⎯
⎯
V
Current Gain-Bandwidth Product  
180  
MHz  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB with minimum recommended pad layout.  
4. Device mounted on FR-4 PCB with 1 inch2 copper pad layout.  
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
1 of 4  
www.diodes.com  
December 2008  
© Diodes Incorporated  
2DB1713  
Document number: DS31634 Rev. 2 - 2  
1234

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