SHANGHAI SUNRISE ELECTRONICS CO., LTD.
2CK48, 2CK48A, 2CK48B
SILICON EPITAXIAL PLANAR
SWITCHING DIODE
TECHNICAL
SPECIFICATION
REVERSE VOLTAGE: 35-60-90V
FORWARD CURRENT: 150mA
FEATURES
• Small glass structure ensures high reliability
DO - 35
• Fast switching
• Low leakage
1.0 (25.4)
MIN.
• High temperature soldering guaranteed:
250oC/10S/9.5mm lead length
at 5 lbs tension
.060 (1.5)
.090 (2.3)
DIA.
.120 (3.0)
.200 (5.1)
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
1.0 (25.4)
MIN.
MIL-STD 202E, method 208C
.018 (0.46)
.022 (0.56)
DIA.
• Case: Glass,hermetically sealed
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND CHARACTERISTICS
(Ratings at 25oC ambient temperature unless otherwise specified)
RATINGS
SYMBOL 2CK48 2CK48A 2CK48B UNITS
VR
VRM
IO
Reverse Voltage
35
40
60
70
150
450
1
90
V
V
Peak Reverse Voltage
100
Forward Current (average)
Repetitive Forward Peak Current
Forward Voltage (IF=10mA)
Reverse Current (V=VR)
mA
mA
V
IFRM
VF
1
IR1
IR2
Ct
µA
µA
pF
nS
Reverse Current (V=VR,TJ=100oC)
20
3
Capacitance
(Note 1)
(Note 2)
4
Reverse Recovery Time
Thermal Resistance
trr
5
oC/mW
oC
Rθ(ja)
0.35
(junction to ambient)
(Note 3)
T
STG,TJ
-55 +175
Operating Junction and Storage Temperature Range
Note
1. VR=1V, f=1 MHz
2. IF=10mA to IR=10mA, Irr=1mA
3: Valid provided that leads are kept at ambient temperature at a distance of 8mm from case.
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