Datasheet > 2SC5651

2SC5651

更新时间： 2024-01-15 08:40:55

品牌	Logo	应用领域
CEL		晶体管
页数	文件大小	规格书
2页	19K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon, NPN, CERAMIC, M23, 3 PIN

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技术参数
数据手册

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2SC5651 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.78	Is Samacsys：	N
其他特性：	LOW NOISE	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	0.1 A	基于收集器的最大容量：	0.8 pF
集电极-发射极最大电压：	6 V	配置：	SINGLE
最高频带：	L BAND	JESD-30 代码：	R-CBCC-N3
元件数量：	1	端子数量：	3
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	4500 MHz
Base Number Matches：	1

2SC5651 数据手册

PRELIMINARY DATA SHEET

NPN SILICON TRANSISTOR NE688M23

OUTLINE DIMENSIONS ^{(Units in mm)}

FEATURES

PACKAGE OUTLINE M03

•

NEW MINIATURE M23 PACKAGE:

– World's smallest transistor package footprint —

leads are completely underneath package body

– Low profile/0.55 mm package height

0.5

– Ceramic substrate for better RF performance

•

HIGH GAIN BANDWIDTH PRODUCT:

0.25

0.4

fT = 9.5 GHz

LOW NOISE FIGURE:

NF = 1.7 dB at 2 GHz

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

0.25

0.2

0.15

DESCRIPTION

0.6

The NE688M23 transistor is designed for low cost amplifier

andoscillatorapplications.Lownoisefigure,highgainandhigh

current capability equate to wide dynamic range and excellent

linearity. NEC's new low profile/ceramic substrate style "M23"

package is ideal for today's portable wireless applications. The

NE688 is also available in chip and six different low cost plastic

surface mount package styles.

BOTTOM VIEW

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

EIAJ¹REGISTERED NUMBER

PACKAGE OUTLINE

NE688M23

2SC5651

M23

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Gain Bandwidth at VCE = 1 V, IC = 3 mA, f = 2 GHz

Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz

Insertion Power Gain at VCE = 1 V, IC = 3 mA, f = 2 GHz

Forward Current Gain at VCE = 1 V, IC = 3 mA

Collector Cutoff Current at VCB = 5 V, IE = 0

GHz

1.9

|S21E|²

2.5

hFE

145

0.1

0.8

ICBO

IEBO

µA

Emitter Cutoff Current at VEB = 1 V, IC = 0

CRE

Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz

0.7

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

California Eastern Laboratories

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