RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
2SC5344
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.2 W (Tamb=25OC)
Collector current
ICM :
*
*
*
0.8
A
Collector-base voltage
: 35
V
V
(BR)CBO
SOT-23
Operating and storage junction temperature range
T ,Tstg: -55OC to +150OC
J
COLLECTOR
3
0.055(1.40)
0.047(1.20)
BASE
MECHANICAL DATA
* Case: Molded plastic
1
2
EMITTER
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
* Weight: 0.008 gram
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
3
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
MIN
35
TYP
MAX
UNITS
Collector-base breakdown voltage (I = 100µA, I =0)
V
-
-
-
-
-
-
-
-
V
V
V
C
E
(BR)CBO
30
Collector-emitter breakdown voltage (I = 10mA, I =0)
V
(BR)CEO
C
B
Emitter-base breakdown voltage(IE=10µA, Ic=0)
V
5
-
(BR)EBO
Collector cut-off current (V = 35V, I =0)
0.1
0.1
I
µA
µA
-
CB
E
CBO
-
Emitter cut-off current (V = 5V, I =0)
I
EB
C
EBO
DC current gain (V = 1V, I = 100mA)
h
CE
C
FE(1)
100
-
-
-
320
0.5
Collector-emitter saturation voltage (I = 500mA, I = 50mA)
V
C
B
V
CE(sat)
-
-
-
-
MHz
pF
Transition frequency (V = 5V, I = 10mA)
f
120
13
CE
C
T
Collector output capacitance (V = 10V, I =0, f= 1MHZ)
CB
E
Cob
CLASSIFICATION OF h
FE(1)
RANK
Range
Q
Y
100-200
FAO
160-320
Marking
FAY
2006-3