是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e2 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.5 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN COPPER |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SC5053_REV2008 | ROHM | Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA |
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2SC5053P | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon |
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2SC5053Q | ETC | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SC-62 |
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2SC5053R | ETC | TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | SC-62 |
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2SC5053T100 | ROHM | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPT3, 3 P |
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2SC5053T100/P | ROHM | 1A, 50V, NPN, Si, POWER TRANSISTOR |
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