Datasheet > 2SB1424_1

2SB1424_1

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
罗姆 - ROHM		晶体晶体管
页数	文件大小	规格书
1页	61K
描述
Low VCE(sat) Transistor (−20V, −3A)

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数据手册

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2SB1424_1 数据手册

Transys

Electronics

I M I T E D

SOT-89 Plastic-Encapsulate Transistors

SOT-89

2SB1424 TRANSISTOR (PNP)

1. ^BASE

FEATURES

Power dissipation

2. ^COLLECTOR

3. ^EMITTER

P_CM:

600

mW (Tamb=25℃)

Collector current

I_CM:

-3

Collector-base voltage

V_(BR)CBO

-20

Operating and storage junction temperature range

T_J, T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

Ic=-50µA, I_E=0

Ic=-1mA, I_B=0

MIN

-20

-6

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_E=-50µA, I_C=0

µA

V_CB=-20V, I_E=0

-0.1

390

-0.5

I_EBO

Emitter cut-off current

V_EB=-5V, I_C=0

h_FE(1)

DC current gain

V_CE=-2V, I_C=-100mA

120

V_CE(sat)

Collector-emitter saturation voltage

Transition frequency

I_C=-2A, I_B=-100mA

MHz

f_T

V_CE=-2V, I_C=-500mA, f=100MHz

240

C_ob

Collector output capacitance

_CB=-10V, I_E=0, f=1MHz

CLASSIFICATION OF h_FE(1)

Rank

Range

120-270

AEQ

180-390

Marking

AER

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