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2SA1981S

更新时间： 2024-01-23 02:16:31

品牌	Logo	应用领域
可天士 - KODENSHI		放大器功率放大器
页数	文件大小	规格书
4页	287K
描述
Audio power amplifier application

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技术参数
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2SA1981S 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.72	Base Number Matches：	1

2SA1981S 数据手册

2SA1981S

PNP Silicon Transistor

Description

PIN Connection

• Audio power amplifier application

Features

• High h_FE: h_FE=100~320

• Complementary pair with 2SC5344S

Ordering Information

SOT-23

Type No.

Marking

Package Code

EA □ □

2SA1981S

SOT-23

① ②

③

① Device Code ② hFE Rank ③ Year&Week Code

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-35

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

-30

-5

Collector current

-800

350

°C

Collector dissipation

P_C*

Junction temperature

T_j

150

Storage temperature

T_stg

-55~150

°C

* Package mounted on 99.5% alumina 10×8×0.6mm

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=-500μA, I_E=0

-35

-30

-5

I_C=-1mA, I_B=0

I_E=-50μA, I_C=0

V_CB=-35V, I_E=0

-0.1

320

-0.5

μA

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

DC current gain

V_CE=-1V, I_C=-100mA

I_C=-500mA, I_B=-20mA

V_CE=-5V, I_E=10mA

V_CB=-10V, I_E=0, f=1MHz

100

h_FE

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

120

MHz

Collector output capacitance

* : h_FErank / O : 100~200, Y : 160~320

Cob

KSD-T5C021-000

12 3 4

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