Datasheet > 晶体管 > 小信号双极晶体管> 2SA1980S

2SA1980S

更新时间： 2024-02-20 15:08:08

品牌	Logo	应用领域
可天士 - KODENSHI		晶体放大器小信号双极晶体管
页数	文件大小	规格书
4页	263K
描述
General small signal amplifier

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技术参数
数据手册

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2SA1980S 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.63
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SA1980S 数据手册

2SA1980S

PNP Silicon Transistor

Description

• General small signal amplifier

PIN Connection

Features

• Low collector saturation voltage :

V_CE(sat)=-0.3V(Max.)

• Low output capacitance : Cob=4pF(Typ.)

• Complementary pair with 2SC5343S

SOT-23

Ordering Information

Type NO.

Marking

Package Code

①

2SA1980S

SOT-23

② ③

①Device Code ②hFE Rank ③Year&Week Code

Absolute Maximum Ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Rating

-50

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

-50

-5

Collector current

-150

350

°C

Collector power dissipation

Junction temperature

P_C*

T_j

150

Storage temperature range

* Package mounted on 99.5% alumina 10×8×0.6mm

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-emitter breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

BV_CEO

I_CBO

Test Condition

Min. Typ. Max. Unit

I_C=-1mA, I_B=0

-50

μA

V_CB=-50V, I_E=0

-0.1

700

-0.3

I_EBO

V_EB=-5V, I_C=0

DC current gain

h_FE

V_CE=-6V, I_C=-2mA

I_C=-100mA, I_B=-10mA

V_CE=-10V, I_C=-1mA

V_CB=-10V, I_E=0, f=1MHz

Collector-emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

MHz

Collector output capacitance

C_ob

V_CE=-6V, I_C=-0.1mA

f=1KHz, Rg=10KΩ

Noise figure

*: h_FErank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700.

Preliminary

12 3 4

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