Datasheet > 28F016XS

28F016XS

更新时间： 2022-11-25 16:12:58

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
54页	1262K
描述
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY

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28F016XS 数据手册

28F016XS

16-MBIT (1 MBIT x 16, 2 MBIT x 8)

SYNCHRONOUS FLASH MEMORY

Effective Zero Wait-State Performance

up to 33 MHz

Synchronous Pipelined Reads

Backwards-Compatible with 28F008SA

Command-Set

2 µA Typical Deep Power-Down

SmartVoltage Technology

1 mA Typical Active I_CCCurrent in

Static Mode

User-Selectable 3.3V or 5V V_CC

User-Selectable 5V or 12V V_PP

16 Separately-Erasable/Lockable

128-Kbyte Blocks

0.33 MB/sec Write Transfer Rate

Configurable x8 or x16 Operation

1 Million Erase Cycles per Block

56-Lead TSOP and SSOP Type I

Package

State-of-the-Art 0.6 µm ETOX™ IV Flash

Technology

Intel’s 28F016XS 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing

truly revolutionary high-performance products. Combining very high read performance with the intrinsic

nonvolatility of flash memory, the 28F016XS eliminates the traditional redundant memory paradigm of

shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for

improved system performance. The innovative capabilities of the 28F016XS enable the design of direct-

execute code and mass storage data/file flash memory systems.

The 28F016XS is the highest performance high-density nonvolatile read/program flash memory solution

available today. Its synchronous pipelined read interface, flexible V_CCand V_PPvoltages, extended cycling,

fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a

highly flexible memory component suitable for resident flash component arrays on the system board or

SIMMs. The synchronous pipelined interface and x8/x16 architecture of the 28F016XS allow easy interface

with minimal glue logic to a wide range of processors/buses, providing effective zero wait-state read

performance up to 33 MHz. The 28F016XS’s dual read voltage allows the same component to operate at

either 3.3V or 5.0V V_CC. Programming voltage at 5V V_PPminimizes external circuitry in minimal-chip, space

critical designs, while the 12.0V V_PPoption maximizes program/erase performance. Its high read performance

combined with flexible block locking enable both storage and execution of operating systems/application

software and fast access to large data tables. The 28F016XS is manufactured on Intel’s 0.6 µm ETOX IV

process technology.

November 1996

Order Number: 290532-004

12 3 4 5 6 7...54

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