1N4150.TR

更新时间： 2024-01-24 01:57:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管
页数	文件大小	规格书
3页	28K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, DO-35,

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技术参数
数据手册

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1N4150.TR 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
风险等级：	5.59	外壳连接：	ISOLATED
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	最大正向电压 (VF)：	1 V
JESD-30 代码：	O-LALF-W2	元件数量：	1
端子数量：	2	最大输出电流：	0.2 A
封装主体材料：	GLASS	封装形状：	ROUND
封装形式：	LONG FORM	最大功率耗散：	0.5 W
认证状态：	Not Qualified	最大重复峰值反向电压：	75 V
最大反向电流：	0.1 µA	最大反向恢复时间：	0.004 µs
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL

1N4150.TR 数据手册

Discr ete P OWER & Sign a l

Tech n ologies

1N4150 / FDLL4150

COLOR BAND MARKING

DEVICE

1ST BAND 2ND BAND

FDLL4150 BLACK

ORANGE

LL-34

THE PLACEMENT OF THE EXPANSION GAP

HAS NO RELATIONSHIP TO THE LOCATION

OF THE CATHODE TERMINAL

DO-35

High Conductance Ultra Fast Diode

Sourced from Process 1R. See MMBD1201-1205 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

Average Rectified Current

DC Forward Current

I_O

200

400

600

I_F

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

i_f(surge)

1.0

4.0

Pulse width = 1.0 microsecond

Storage Temperature Range

-65 to +200

T_stg

T_J

Operating Junction Temperature

175

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 200 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

1N / FDLL 4150

P_D

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Ambient

500

3.33

300

mW/ C

R_θ

C/W

ã 1997 Fairchild Semiconductor Corporation

12 3

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