Datasheet > 1N4148.1N4448

1N4148.1N4448

更新时间： 2022-11-25 21:48:30

品牌	Logo	应用领域
TEMIC		二极管
页数	文件大小	规格书
4页	48K
描述
Silicon Epitaxial Planar Diodes

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1N4148.1N4448 数据手册

1N4148.1N4448

Silicon Epitaxial Planar Diodes

Features

Electrically equivalent diodes:

1N4148 – 1N914

1N4448 – 1N914B

Applications

Extreme fast switches

94 9367

Absolute Maximum Ratings

T = 25 C

Parameter

Test Conditions

Type

Symbol

Value

100

Unit

Repetitive peak reverse voltage

Reverse voltage

RRM

Peak forward surge current

Repetitive peak forward current

Forward current

t =1 s

FSM

FRM

500

300

Average forward current

Power dissipation

V =0

150

FAV

l=4mm, T =45 C

440

l=4mm, T 25 C

500

Junction temperature

200

Storage temperature range

stg

–65...+200

Maximum Thermal Resistance

T = 25 C

Parameter

Test Conditions

l=4mm, T =constant

Symbol

Value

350

Unit

K/W

Junction ambient

thJA

TELEFUNKEN Semiconductors

1 (4)

Rev. A1, 12-Dec-94

12 3 4

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