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1N5822 PDF预览

1N5822

更新时间: 2024-01-05 09:36:30
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 二极管
页数 文件大小 规格书
5页 66K
描述
LOW DROP POWER SCHOTTKY RECTIFIER

1N5822 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Active包装说明:HERMETIC SEALED, D5B, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:1.63Is Samacsys:N
其他特性:METALLURGICALLY BONDED应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.4 VJESD-30 代码:O-LELF-R2
JESD-609代码:e0元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最大输出电流:3 A
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin/Lead (Sn/Pb)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

1N5822 数据手册

 浏览型号1N5822的Datasheet PDF文件第2页浏览型号1N5822的Datasheet PDF文件第3页浏览型号1N5822的Datasheet PDF文件第4页浏览型号1N5822的Datasheet PDF文件第5页 
®
1N582x  
LOW DROP POWER SCHOTTKY RECTIFIER  
MAIN PRODUCTS CHARACTERISTICS  
IF(AV)  
VRRM  
Tj  
3 A  
40 V  
150°C  
0.475 V  
VF (max)  
FEATURES AND BENEFITS  
VERY SMALL CONDUCTION LOSSES  
NEGLIGIBLE SWITCHING LOSSES  
EXTREMELY FAST SWITCHING  
LOW FORWARD VOLTAGE DROP  
DO-201AD  
DESCRIPTION  
Axial Power Schottky rectifier suited for Switch  
Mode Power Supplies and high frequency DC to  
DC converters. Packaged in DO-201AD these  
devices are intended for use in low voltage, high  
frequency inverters, free wheeling, polarity  
protection and small battery chargers.  
ABSOLUTE RATINGS (limiting values)  
Value  
Symbol  
Parameter  
Unit  
1N5820 1N5821 1N5822  
VRRM  
IF(RMS)  
IF(AV)  
20  
30  
40  
V
A
A
Repetitive peak reverse voltage  
RMS forward current  
10  
3
Average forward current  
TL = 100°C  
δ = 0.5  
3
3
A
A
TL = 110°C  
δ = 0.5  
IFSM  
80  
Surge non repetitive forward current  
Storage temperature range  
tp = 10 ms  
Sinusoidal  
Tstg  
Tj  
- 65 to + 150  
150  
°C  
°C  
Maximum operating junction temperature *  
Critical rate of rise of reverse voltage  
dV/dt  
10000  
V/µs  
dPtot  
dTj  
1
* :  
<
thermal runaway condition for a diode on its own heatsink  
Rth(ja)  
July 1999 - Ed: 2A  
1/5  

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