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10CTQ150SPBF_10 PDF预览

10CTQ150SPBF_10

更新时间: 2022-09-10 17:54:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 175K
描述
Schottky Rectifier, 2 x 5 A

10CTQ150SPBF_10 数据手册

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VS-10CTQ150SPbF, VS-10CTQ150-1PbF  
Vishay High Power Products  
Schottky Rectifier, 2 x 5 A  
FEATURES  
VS-10CTQ150-1PbF  
VS-10CTQ150SPbF  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
2
1
1
3
3
Common  
cathode  
D2PAK  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
TO-262  
DESCRIPTION  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 5 A  
150 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
620  
A
VF  
5 Apk, TJ = 125 °C (per leg)  
Range  
0.73  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-10CTQ150SPbF  
VS-10CTQ150-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
150  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
5
IF(AV)  
50 % duty cycle at TC = 155 °C, rectangular waveform  
A
per device  
10  
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 μs sine or 3 μs rect. pulse  
620  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 10 mH  
115  
5
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1
Document Number: 94116  
Revision: 23-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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